SFH483 Datasheet GaAlAs Infrared Emitter

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter SFH 483 ø0.45 Chip position 1 0.9 .1 1.1 .9 0 ø5.5 ø5.2 2.7 1 2.54 mm spacing 14.5 12.5 3.6 3.0 ø4.3 ø4.1 Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. weight 0.5 g GET06625 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Datasheet (PDF)

Datasheet Details

Part number	SFH483
Manufacturer	Siemens Semiconductor Group (now Infineon)
File Size	34.75 KB
Description	GaAlAs Infrared Emitter
Datasheet	SFH483

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Vorwärtsgleichstrom, TC ≤ 25 °C Forward current Stoßstrom, tp = 10 µs, D = 0, TC = 25 °C Surge current Verlustleistung, TC = 25 °C Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 40 ...

+ 80 100 5 200 2.5 470 450 160 Einheit Unit °C °C V mA A mW K/W K/W Top;

Tstg Tj VR IF IFSM Ptot RthJA RthJC Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite

Key Features

Highly efficient GaAlAs LED Anode is electrically connected to the case High pulse power High reliability DIN humidity category in acc. with DIN 40040 GQG q Same package as BPX 63, BP 103, LD 242, SFH 464 q q q q q.

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